Invention and Description of p-CuO /n-Si (200 oC) Heterojunction for Photodiode Applications

Abstract

P-CuO /n-Si was prepared and studied with respect to Drop casting method  at  200°C temperature, it was concluded that energy band gap of CuO films is (1.6)eV calculated from optical properties. AFM reveal that the generated CuO Films have ball-shape with perfect homogeneity, the measurements of the XRD revealed that the CuO were of cubic crystal structure, the responsively photo detector after deposited CuO showed an increase in response.

Keywords: CuO, Structure properties, AFM, Optical properties, Solar cell.